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	Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method
	HATORI, NOBUAKI; YAMAMOTO, TSUYOSHI; SUDO, HISAO; ARAKAWA, YASUHIKO
	2012-07-31
著作权人	FUJITSU LIMITED
专利号	US8232125
国家	美国
文献子类	授权发明
其他题名	Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method
英文摘要	An active layer having a p-type quantum dot structure is disposed over a lower cladding layer made of semiconductor material of a first conductivity type. An upper cladding layer is disposed over the active layer. The upper cladding layer is made of semiconductor material, and includes a ridge portion and a cover portion. The ridge portion extends in one direction, and the cover portion covers the surface on both sides of the ridge portion. A capacitance reducing region is disposed on both sides of the ridge portion and reaching at least the lower surface of the cover portion. The capacitance reducing region has the first conductivity type or a higher resistivity than that of the ridge portion, and the ridge portion has a second conductivity type. If the lower cladding layer is an n-type, the capacitance reducing region reaches at least the upper surface of the lower cladding layer.
公开日期	2012-07-31
申请日期	2009-06-18
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38499]
专题	半导体激光器专利数据库
作者单位	FUJITSU LIMITED
推荐引用方式 GB/T 7714	HATORI, NOBUAKI,YAMAMOTO, TSUYOSHI,SUDO, HISAO,et al. Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method. US8232125. 2012-07-31.

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