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	Method of manufacturing nitride-composite semiconductor laser element, with disclocation control
	ITO, SHIGETOSHI; YUASA, TAKAYUKI; UETA, YOSHIHIRO; TANEYA, MOTOTAKA; TANI, ZENPEI; MOTOKI, KENSAKU
	2010-08-24
著作权人	SHARP KABUSHIKI KAISHA
专利号	US7781244
国家	美国
文献子类	授权发明
其他题名	Method of manufacturing nitride-composite semiconductor laser element, with disclocation control
英文摘要	A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.
公开日期	2010-08-24
申请日期	2008-09-16
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38479]
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	ITO, SHIGETOSHI,YUASA, TAKAYUKI,UETA, YOSHIHIRO,et al. Method of manufacturing nitride-composite semiconductor laser element, with disclocation control. US7781244. 2010-08-24.

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