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	Nanowire array-based light emitting diodes and lasers
	WANG, DELI; BAO, XINYU; XIANG, BIN; SOCI, CESARE; APLIN, DAVID
	2013-04-23
著作权人	THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
专利号	US8426224
国家	美国
文献子类	授权发明
其他题名	Nanowire array-based light emitting diodes and lasers
英文摘要	Semiconductor nanowire arrays are used to replace the conventional planar layered construction for fabrication of LEDs and laser diodes. The nanowire arrays are formed from III-V or II-VI compound semiconductors on a conducting substrate. For fabrication of the device, an electrode layer is deposited on the substrate, a core material of one of a p-type and n-type compound semiconductor material is formed on top of the electrode as a planar base with a plurality of nanowires extending substantially vertically therefrom. A shell material of the other of the p-type and n-type compound semiconductor material is formed over an outer surface of the core material so that a p-n junction is formed across the planar base and over each of the plurality of nanowires. An electrode coating is formed an outer surface of the shell material for providing electrical contact to a current source. Heterostructures and superlattices grown along the lengths of the nanowires allow the confinement of photons in the quantum well to enhance the efficiency and as well as color tuning.
公开日期	2013-04-23
申请日期	2007-12-18
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38440]
专题	半导体激光器专利数据库
作者单位	THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
推荐引用方式 GB/T 7714	WANG, DELI,BAO, XINYU,XIANG, BIN,et al. Nanowire array-based light emitting diodes and lasers. US8426224. 2013-04-23.

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