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	Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method
	NAKAMURA, SHUJI; DENBAARS, STEVEN
	2010-11-02
著作权人	CREE, INC.
专利号	US7825006
国家	美国
文献子类	授权发明
其他题名	Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method
英文摘要	One embodiment of a method according to the present invention for fabricating a high light extraction photonic device comprises growing a lift-off layer on a substrate and growing an epitaxial semiconductor device structure on the lift-off layer such that the lift-off layer is sandwiched between said device structure and substrate. The epitaxial semiconductor structure comprises an emitter adapted to emit light in response to a bias. The device structure, lift-off layer and substrate is flip-chip mounted on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and lift-off layer. The lift-off layer is removed to separate the substrate from the device structure. Different removal methods can be used such as removal by a photo electrochemical etch or by illuminating the lift-off layer with laser light.
公开日期	2010-11-02
申请日期	2004-05-06
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38206]
专题	半导体激光器专利数据库
作者单位	CREE, INC.
推荐引用方式 GB/T 7714	NAKAMURA, SHUJI,DENBAARS, STEVEN. Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method. US7825006. 2010-11-02.

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