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	Fabrication method of an epilayer structure InGaAsP/InP ridge waveguide phase modulator with high phase modulation efficiency
	BYUN, YOUNG TAE; PARK, HWA SUN; LEE, SEOK; WOO, DEOK HA; YI, JONG CHANG
	2006-05-02
著作权人	KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
专利号	US7037739
国家	美国
文献子类	授权发明
其他题名	Fabrication method of an epilayer structure InGaAsP/InP ridge waveguide phase modulator with high phase modulation efficiency
英文摘要	A fabrication method of an epilayer structure for InGaAsP/InP ridge waveguide phase modulator with high phase modulation efficiency. It relates to a P-p-n-N InGaAsP/InP ridge waveguide phase modulator fabricated to be that the phase change of the TE-mode is linearly proportional to the reverse bias voltage at 55 μm wavelength. A method for fabricating an epilayer structure for achieving the optical confinement in the vertical direction of an InGaAsP/InP waveguide phase modulator, characterized by comprising the steps of: forming a first cladding layer of N-InP on an N+-InP substrate; forming a first waveguide layer of n-InGaAsP and a second waveguide layer of p-InGaAsP in sequence on the first cladding layer; forming a second cladding layer of P-InP and a third cladding layer of P-InP in sequence on the second waveguide layer; and forming an electrode layer of p+InGaAs on the third cladding layer.
公开日期	2006-05-02
申请日期	2004-01-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38193]
专题	半导体激光器专利数据库
作者单位	KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
推荐引用方式 GB/T 7714	BYUN, YOUNG TAE,PARK, HWA SUN,LEE, SEOK,et al. Fabrication method of an epilayer structure InGaAsP/InP ridge waveguide phase modulator with high phase modulation efficiency. US7037739. 2006-05-02.

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