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	Surface emitting semiconductor laser, surface emitting semiconductor laser array, surface emitting semiconductor laser device, optical transmission device, information processing apparatus, and method of producing surface emitting semiconductor laser
	HAYAKAWA, JUNICHIRO; TAKEDA, KAZUTAKA; MURAKAMI, AKEMI
	2016-02-02
著作权人	FUJI XEROX CO., LTD.
专利号	US9252562
国家	美国
文献子类	授权发明
其他题名	Surface emitting semiconductor laser, surface emitting semiconductor laser array, surface emitting semiconductor laser device, optical transmission device, information processing apparatus, and method of producing surface emitting semiconductor laser
英文摘要	A surface emitting semiconductor laser includes a substrate, a first conductivity-type first semiconductor multilayer reflector, an active layer, a semiconductor layer, a second conductivity-type second semiconductor multilayer reflector that includes a current confinement layer, and a heat dissipating metal member. At least the first semiconductor multilayer reflector, the active layer, the semiconductor layer, and the second semiconductor multilayer reflector are stacked in this order on the substrate. A columnar structure having a top portion, a side surface, and a bottom portion is formed from the second semiconductor multilayer reflector to the semiconductor layer. The heat dissipating metal member is connected to the semiconductor layer exposed at the bottom portion of the columnar structure.
公开日期	2016-02-02
申请日期	2014-05-12
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/37750]
专题	半导体激光器专利数据库
作者单位	FUJI XEROX CO., LTD.
推荐引用方式 GB/T 7714	HAYAKAWA, JUNICHIRO,TAKEDA, KAZUTAKA,MURAKAMI, AKEMI. Surface emitting semiconductor laser, surface emitting semiconductor laser array, surface emitting semiconductor laser device, optical transmission device, information processing apparatus, and method of producing surface emitting semiconductor laser. US9252562. 2016-02-02.

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