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	Non-reactive barrier metal for eutectic bonding process
	LIN, CHAO KUN
	2016-05-17
著作权人	TOSHIBA CORPORATION
专利号	US9343641
国家	美国
文献子类	授权发明
其他题名	Non-reactive barrier metal for eutectic bonding process
英文摘要	A eutectic metal layer (e.g., gold/tin) bonds a carrier wafer structure to a device wafer structure. In one example, the device wafer structure includes a silicon substrate upon which an epitaxial LED structure is disposed. A layer of silver is disposed on the epitaxial LED structure. The carrier wafer structure includes a conductive silicon substrate covered with an adhesion layer. A layer of non-reactive barrier metal (e.g., titanium) is provided between the silver layer and the eutectic metal to prevent metal from the eutectic layer (e.g., tin) from diffusing into the silver during wafer bonding. During wafer bonding, the wafer structures are pressed together and maintained at more than 280° C. for more than one minute. Use of the non-reactive barrier metal layer allows the total amount of expensive platinum used in the manufacture of a vertical blue LED manufactured on silicon to be reduced, thereby reducing LED manufacturing cost.
公开日期	2016-05-17
申请日期	2011-08-02
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/37532]
专题	半导体激光器专利数据库
作者单位	TOSHIBA CORPORATION
推荐引用方式 GB/T 7714	LIN, CHAO KUN. Non-reactive barrier metal for eutectic bonding process. US9343641. 2016-05-17.

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