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	Doped diamond LED devices and associated methods
	SUNG, CHIEN-MIN
	2011-08-30
著作权人	SUNG CHIEN-MIN
专利号	US8008668
国家	美国
文献子类	授权发明
其他题名	Doped diamond LED devices and associated methods
英文摘要	LED devices and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the SiC layer, doping the diamond layer to form a conductive diamond layer, removing the Si wafer to expose the SiC layer opposite to the conductive diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer, and coupling an n-type electrode to at least one of the semiconductor layers such that the plurality of semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode.
公开日期	2011-08-30
申请日期	2010-05-03
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/37458]
专题	半导体激光器专利数据库
作者单位	SUNG CHIEN-MIN
推荐引用方式 GB/T 7714	SUNG, CHIEN-MIN. Doped diamond LED devices and associated methods. US8008668. 2011-08-30.

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