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	Tailorable titanium-tungsten alloy material thermally matched to semiconductor substrates and devices
	HUFF, MICHAEL A.; SUNAL, PAUL
	2014-10-07
著作权人	CORPORATION FOR NATIONAL RESEARCH INITIATIVES
专利号	US8852378
国家	美国
文献子类	授权发明
其他题名	Tailorable titanium-tungsten alloy material thermally matched to semiconductor substrates and devices
英文摘要	The present invention relates generally to a metallic alloy composed of Titanium and Tungsten that together form an alloy having a Coefficient of Thermal Expansion (CTE), wherein the content of the respective constituents can be adjusted so that the alloy material can be nearly perfectly matched to that of a commonly used semiconductor and ceramic materials. Moreover, alloys of Titanium-Tungsten have excellent electrical and thermal conductivities making them ideal material choices for many electrical, photonic, thermoelectric, MMIC, NEMS, nanotechnology, power electronics, MEMS, and packaging applications. The present invention describes a method for designing the TiW alloy so as to nearly perfectly match the coefficient of thermal expansion of a large number of different types of commonly used semiconductor and ceramic materials. The present invention also describes a number of useful configurations wherein the TiW material is made as well as how it can be shaped, formed and polished into heat sink, heat spreaders, and electrodes for many applications. The present invention also discloses the direct bonding of a TiW substrate to a semiconductor substrate.
公开日期	2014-10-07
申请日期	2009-06-30
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/37425]
专题	半导体激光器专利数据库
作者单位	CORPORATION FOR NATIONAL RESEARCH INITIATIVES
推荐引用方式 GB/T 7714	HUFF, MICHAEL A.,SUNAL, PAUL. Tailorable titanium-tungsten alloy material thermally matched to semiconductor substrates and devices. US8852378. 2014-10-07.

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