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	Manufacturing method for nitride III-V compound semiconductor device using bonding
	MATSUDA, OSAMU; KOBAYASHI, TOSHIMASA; NAKAYAMA, NORIKAZU; KAWAI, HIROJI
	2001-08-28
著作权人	SONY CORPORATION
专利号	US6281032
国家	美国
文献子类	授权发明
其他题名	Manufacturing method for nitride III-V compound semiconductor device using bonding
英文摘要	In a semiconductor device manufacturing method capable of manufacturing semiconductor lasers, light emitting diodes or electron transport devices using nitride III-V compound semiconductors with a high productivity, a GaN semiconductor laser wafer is prepared in which a plurality of semiconductor lasers are formed on an AlGaInN semiconductor layer on a c-face sapphire substrate and separated from each other by grooves deep enough to reach the c-face sapphire substrate, and a p-side electrode and an n-side electrode are formed in each semiconductor laser. The GaN semiconductor laser wafer is bonded to a photo-diode built-in Si wafer having formed a photo diode for monitoring light outputs and solder electrodes in each pellet by positioning the p-side electrode and the n-side electrode in alignment with the solder electrodes, respectively. After that, by lapping the c-face sapphire substrate from its bottom surface deep enough to reach the grooves or by dicing the c-face sapphire substrate from its bottom surface, the semiconductor lasers on the photo-diode built-in Si wafer are separated from each other. After that, the photo-diode built-in Si wafer is divided by dicing into discrete pellets. A GaN semiconductor laser chip, thus obtained, is assembled on a package.
公开日期	2001-08-28
申请日期	1999-04-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/36566]
专题	半导体激光器专利数据库
作者单位	SONY CORPORATION
推荐引用方式 GB/T 7714	MATSUDA, OSAMU,KOBAYASHI, TOSHIMASA,NAKAYAMA, NORIKAZU,et al. Manufacturing method for nitride III-V compound semiconductor device using bonding. US6281032. 2001-08-28.

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