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	Semiconductor modification process for conductive and modified electrical regions and related structures
	BONAR, JAMES RONALD; VALENTINE, GARETH; GORTON, STEPHEN WARREN; GONG, ZHENG; SMALL, JAMES
	2019-02-19
著作权人	FACEBOOK TECHNOLOGIES, LLC
专利号	US10211371
国家	美国
文献子类	授权发明
其他题名	Semiconductor modification process for conductive and modified electrical regions and related structures
英文摘要	There is herein described a process for providing improved device performance and fabrication techniques for semiconductors. More particularly, the present invention relates to a process for forming features, such as pixels, on GaN semiconductors using a p-GaN modification and annealing process. The process also relates to a plasma and thermal anneal process which results in a p-GaN modified layer where the annealing simultaneously enables the formation of conductive p-GaN and modified p-GaN regions that behave in an n-like manner and block vertical current flow. The process also extends to Resonant-Cavity Light Emitting Diodes (RCLEDs), pixels with a variety of sizes and electrically insulating planar layer for electrical tracks and bond pads.
公开日期	2019-02-19
申请日期	2015-02-13
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/35655]
专题	半导体激光器专利数据库
作者单位	FACEBOOK TECHNOLOGIES, LLC
推荐引用方式 GB/T 7714	BONAR, JAMES RONALD,VALENTINE, GARETH,GORTON, STEPHEN WARREN,et al. Semiconductor modification process for conductive and modified electrical regions and related structures. US10211371. 2019-02-19.

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