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	Optical bandwidth enhancement of light emitting and lasing transistor devices and circuits
	THEN, HAN WUI; WALTER, GABRIEL; FENG, MILTON; HOLONYAK, JR., NICK
	2011-08-23
著作权人	BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS, THE
专利号	US8005124
国家	美国
文献子类	授权发明
其他题名	Optical bandwidth enhancement of light emitting and lasing transistor devices and circuits
英文摘要	A method for producing wide bandwidth laser emission responsive to high frequency electrical input signals, including the following steps: providing a heterojunction bipolar transistor device having collector, base, and emitter regions; providing at least one quantum size region in the base region, and enclosing at least a portion of the base region in an optical resonant cavity; coupling electrical signals, including the high frequency electrical input signals, with respect to the collector, base and emitter region, to cause laser emission from the transistor device; and reducing the operating beta of the transistor laser device to enhance the optical bandwidth of the laser emission in response to the high frequency electrical signals.
公开日期	2011-08-23
申请日期	2009-10-14
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/35600]
专题	半导体激光器专利数据库
作者单位	BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS, THE
推荐引用方式 GB/T 7714	THEN, HAN WUI,WALTER, GABRIEL,FENG, MILTON,et al. Optical bandwidth enhancement of light emitting and lasing transistor devices and circuits. US8005124. 2011-08-23.

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