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	Method for separating a device-forming layer from a base body
	MATSUSHITA, TAKESHI; TAYANAKA, HIROSHI
	2011-10-11
著作权人	SONY CORPORATION
专利号	USR42830
国家	美国
文献子类	授权发明
其他题名	Method for separating a device-forming layer from a base body
英文摘要	A porous Si layer is formed on a single-crystal Si substrate, and then a p+-type Si layer, p-type Si layer and n+-type Si layer which all make up a solar cell layer. After a protective film is made on the n+-type Si layer, the rear surface of the single-crystal Si substrate is bonded to a tool, and another tool is bonded to the front surface of the protective film. Then, the tools are pulled in opposite directions to mechanically rupture the porous Si layer and to separate the solar cell layer from the single-crystal substrate. The solar cell layer is subsequently sandwiched between two plastic substrates to make a flexible thin-film solar cell.
公开日期	2011-10-11
申请日期	2004-12-23
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/35554]
专题	半导体激光器专利数据库
作者单位	SONY CORPORATION
推荐引用方式 GB/T 7714	MATSUSHITA, TAKESHI,TAYANAKA, HIROSHI. Method for separating a device-forming layer from a base body. USR42830. 2011-10-11.

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