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	Systems and methods using phonon mediated intersubband laser
	GOODHUE, WILLIAM D.; RAM-MOHAN, L. RAMDAS; KARAKASHIAN, ARAM; MENON, VINOD
	2004-12-07
著作权人	UNIVERSITY OF MASSACHUSETTS
专利号	US6829269
国家	美国
文献子类	授权发明
其他题名	Systems and methods using phonon mediated intersubband laser
英文摘要	The present invention is directed to the development of compact, coherent sources emitting in the terahertz frequency region using interface phonons. In accordance with a preferred embodiment, a semiconductor heterostructure light emitting device includes a quantum cascade structure having at least an upper lasing level and a lower lasing level. The system uses heterostructure interface phonon bands to depopulate the lower lasing level of at least a three level semiconductor device. The device includes multiple coupled quantum well modules. In alternate preferred embodiments, the device includes quantum dot layers and/or, quantum wire structures, and/or mini-bands in a superlattice, for example, GaAs/AlGaAs superlattice. The phonons in the device improve efficiency, decrease the threshold current and result in system temperatures that are as high as room temperature. The semiconductor device provides emission of terahertz radiation. In a preferred embodiment the semiconductor device provides at least one emission in the terahertz radiation region and in a far infrared region of the electromagnetic spectrum. The emissions include a first emission having a first energy level and a second emission having a second energy level.
公开日期	2004-12-07
申请日期	2002-05-21
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/35480]
专题	半导体激光器专利数据库
作者单位	UNIVERSITY OF MASSACHUSETTS
推荐引用方式 GB/T 7714	GOODHUE, WILLIAM D.,RAM-MOHAN, L. RAMDAS,KARAKASHIAN, ARAM,et al. Systems and methods using phonon mediated intersubband laser. US6829269. 2004-12-07.

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