Surface emitting laser and photodiode, manufacturing method therefor, and optoelectric integrated circuit using the surface emitting laser and the photodiode
KITAMURA, SHOJIRO; IDE, TSUGIO; HARADA, ATSUSHI; KANEKO, TAKEO
2004-02-03
著作权人SEIKO EPSON CORPORATION
专利号US6687268
国家美国
文献子类授权发明
其他题名Surface emitting laser and photodiode, manufacturing method therefor, and optoelectric integrated circuit using the surface emitting laser and the photodiode
英文摘要The present invention provides a surface emitting laser and a photodiode which permit secure mounting even in mounting by flip chip bonding, and high-speed modulation. The present invention also provides a manufacturing method therefor and an optoelectric integrated circuit using the surface emitting laser and the photodiode. Semiconductor stacked layers stacked on a semiconductor substrate have a light emitting portion and a reinforcing portion formed with a recessed portion provided therebetween, and a p-type ohmic electrode and an n-type ohmic electrode are formed on the top of the reinforcing portion. The p-type ohmic electrode is electrically connected to a p-type contact layer through a contact hole vertically formed in polyimide buried in the recessed portion to permit supply of a current to the light emitting portion in the thickness direction. The recessed portion has a groove formed to reach the semiconductor substrate, thereby suppressing the parasitic capacity between the p-type ohmic electrode and the n-type ohmic electrode.
公开日期2004-02-03
申请日期2002-03-14
状态失效
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/35469]  
专题半导体激光器专利数据库
作者单位SEIKO EPSON CORPORATION
推荐引用方式
GB/T 7714
KITAMURA, SHOJIRO,IDE, TSUGIO,HARADA, ATSUSHI,et al. Surface emitting laser and photodiode, manufacturing method therefor, and optoelectric integrated circuit using the surface emitting laser and the photodiode. US6687268. 2004-02-03.
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