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	Method of improving the fabrication of etched semiconductor devices
	JOSEPH, JOHN R.; LUO, WENLIN; LEAR, KEVIN L.; BRYAN, ROBERT P.
	2003-11-11
著作权人	SUMITOMO ELECTRIC DEVICE INNOVATIONS, U.S.A., INC.
专利号	US6645848
国家	美国
文献子类	授权发明
其他题名	Method of improving the fabrication of etched semiconductor devices
英文摘要	This invention relates to a method of improving the fabrication of etched semiconductor devices by using a patterned adhesion promoter layer over a hydrocarbon planarization material. More specifically, the present invention improves the bonding of a metal interconnect layer to a hydrocarbon planarization material, such as polyimide, by inserting an adhesion promotion layer, such as silicon nitride, between the hydrocarbon planarization material and the metal interconnect layer. A process for improving the fabrication of etched semiconductor devices, comprises the steps of: (1) depositing a hydrocarbon planarization material over a substrate; (2) depositing an adhesion promoter over the hydrocarbon planarization material; (3) defining a first mask and etching back the adhesion promoter so as to form an adhesion promoter pad over a portion of the hydrocarbon planarization material; and (4) depositing a first metal over the adhesion promoter pad.
公开日期	2003-11-11
申请日期	2001-06-01
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/35415]
专题	半导体激光器专利数据库
作者单位	SUMITOMO ELECTRIC DEVICE INNOVATIONS, U.S.A., INC.
推荐引用方式 GB/T 7714	JOSEPH, JOHN R.,LUO, WENLIN,LEAR, KEVIN L.,et al. Method of improving the fabrication of etched semiconductor devices. US6645848. 2003-11-11.

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