| Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials | |
| WONG, WILLIAM S.; KNEISSL, MICHAEL A. | |
| 2003-05-13 | |
| 著作权人 | EPISTAR CORPORATION |
| 专利号 | US6562648 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials |
| 英文摘要 | A method for placing nitride laser diode arrays on a thermally and electrically conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after an intermediate substrate has been attached to the side opposite the sapphire substrate. A secondary layer is subsequently deposited to act as a transfer support structure and bonding interface. The membrane is released from the intermediate substrate and a thermally conducting substrate is subsequently bonded to the side where the sapphire substrate was removed. Similarly, the secondary layer may be used as the new host substrate given an appropriate thickness is deposited prior to removal of the intermediate substrate. |
| 公开日期 | 2003-05-13 |
| 申请日期 | 2000-08-23 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35364]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | EPISTAR CORPORATION |
| 推荐引用方式 GB/T 7714 | WONG, WILLIAM S.,KNEISSL, MICHAEL A.. Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials. US6562648. 2003-05-13. |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论