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	Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers
	HALLER, EUGENE E.; BRUNDERMANN, ERIK
	2000-01-04
著作权人	LAWRENCE BERKELEY LABORATORY
专利号	US6011810
国家	美国
文献子类	授权发明
其他题名	Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers
英文摘要	A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.
公开日期	2000-01-04
申请日期	1997-04-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/35183]
专题	半导体激光器专利数据库
作者单位	LAWRENCE BERKELEY LABORATORY
推荐引用方式 GB/T 7714	HALLER, EUGENE E.,BRUNDERMANN, ERIK. Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers. US6011810. 2000-01-04.

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