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	ハイブリッド光IC装置およびその製造方法
	木村 壮一; 大仲 清司
	1995-01-11
著作权人	松下電器産業株式会社
专利号	JP1995001794B2
国家	日本
文献子类	授权发明
其他题名	ハイブリッド光IC装置およびその製造方法
英文摘要	PURPOSE:To prevent the increase of the wiring capacity due to wire bonding connection by carrying out a wiring step for an IC wafer after dice-bonding a light emitting element in a hole which is formed selectively in a region other than the region in which an electric element has been formed on the IC wafer. CONSTITUTION:A hole 7 is formed selectively in a region other than the region in which an electric element has been formed, on an Si-IC wafer After forming the hole 7, the first wiring metal 3 is formed selectively in the regions where the hole 7 and the electric element are formed. After that, a semiconductor laser 2 is dice-bonded on the wiring metal 3 formed in the hole 7. For example, a solder layer is formed on the N-side electrode 9 of the semiconductor laser 2 and the bonding is made by using the solder layer on the heated wafer to fill the space between the semiconductor laser 2 and the hole 7 with resin 5. The resin on one end side of the semiconductor laser 2 is removed in order to take out the light emitted from the other end of the semiconductor laser 2 to the outside. A wiring metal 6 is formed selectively in the region where a P-side electrode 8 of the semiconductor laser 2 and the electric element are formed.
公开日期	1995-01-11
申请日期	1985-07-23
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/34781]
专题	半导体激光器专利数据库
作者单位	松下電器産業株式会社
推荐引用方式 GB/T 7714	木村 壮一,大仲 清司. ハイブリッド光IC装置およびその製造方法. JP1995001794B2. 1995-01-11.

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