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	複合光半導体素子の製造方法
	木下 順一; 岡島 正季; 紺野 邦明
	1994-04-13
著作权人	TOKYO SHIBAURA ELECTRIC CO
专利号	JP1994028312B2
国家	日本
文献子类	授权发明
其他题名	複合光半導体素子の製造方法
英文摘要	PURPOSE:To obtain a composite functional element with high yield by mirror- polishing one surface of an electronic device, facing the surface and joining the surface in a clean atmosphere. CONSTITUTION:A laser diode LD using GaInAsP 3 as an active layer is formed onto an N-type InP substrate 1, and a P-I-N type photodiode ID employing GaInAs 8 as an absorption layer is shaped onto a semi-insulating InP substrate 6. A cleavage plane in the LD and a substrate 6 surface in the PD are mirror- polished, and brought into mirror-contact 20 in a clean atmosphere and unified. The back of the substrate 1 in the LD and the side surface of the PD are mirror-polished so as to be formed in the same surface, brought into mirror- contact with an N layer 11 on a pi-type Si substrate 10, and bonded so that an insulating isolation layer 12 coincides with a boundary between the LD and the PD. A gate 15 and a source 16 for a FET for driving the LD and a gate 13 and a drain 14 for a FET for amplifying the PD are shaped onto the N layer 1 N side electrodes for each element are omitted, the optical coupling efficiency of the LD and the PD is improved, and energy is conserved largely in assembly operation.
公开日期	1994-04-13
申请日期	1985-02-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/34770]
专题	半导体激光器专利数据库
作者单位	TOKYO SHIBAURA ELECTRIC CO
推荐引用方式 GB/T 7714	木下 順一,岡島 正季,紺野 邦明. 複合光半導体素子の製造方法. JP1994028312B2. 1994-04-13.

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