| Multi-wavelength semiconductor laser device | |
| TAKAHASHI, YOSHIHIKO; OIKAWA, FUMITAKE | |
| 2015-03-10 | |
| 著作权人 | SONY CORPORATION |
| 专利号 | US8976832 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Multi-wavelength semiconductor laser device |
| 英文摘要 | A multi-wavelength semiconductor laser device includes: first and second device sections monolithically formed on a substrate; and a rear end face film formed together on a rear end face of each of the first and second device sections. The first device section is a light-emitting device section having an oscillation wavelength of λ The second device section is a light-emitting device section having an oscillation wavelength of λ2 (λ1<λ2). The rear end face film includes a layer in which N sets (N≧2) of layers each having the combination of a low refractive index layer having a refractive index of n1 and a high refractive index layer having a refractive index of n3 (n1 |
| 公开日期 | 2015-03-10 |
| 申请日期 | 2012-03-15 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34116]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | TAKAHASHI, YOSHIHIKO,OIKAWA, FUMITAKE. Multi-wavelength semiconductor laser device. US8976832. 2015-03-10. |
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