Synthesis and Characterization of Nanocrystalline GaN by Ammonothermal Method Using CsNH2 as Mineralizer

	Synthesis and Characterization of Nanocrystalline GaN by Ammonothermal Method Using CsNH2 as Mineralizer
	W. W. Lin, J. Huang, D. G. Chen, Z. Lin, W. Li, J. K. Huang and F. Huang
刊名	Journal of Nanoscience and Nanotechnology
	2010-09
卷号	10 期号:9 页码:5741-5745
关键词	Ammonothermal GaN Mineralizer Nanocrystals CsNH2 gallium nitride doped gan crystal-growth quantum dots temperature route (ga(nh)(3/2))(n) ferromagnetism nanoparticles conversion
ISSN号	1533-4880
收录类别	SCI
语种	英语
公开日期	2012-11-02
内容类型	期刊论文
源URL	[http://ir.fjirsm.ac.cn/handle/335002/1816]
专题	福建物质结构研究所_中科院福建物质结构研究所_期刊论文
推荐引用方式 GB/T 7714	W. W. Lin, J. Huang, D. G. Chen, Z. Lin, W. Li, J. K. Huang and F. Huang. Synthesis and Characterization of Nanocrystalline GaN by Ammonothermal Method Using CsNH2 as Mineralizer[J]. Journal of Nanoscience and Nanotechnology,2010,10(9):5741-5745.
APA	W. W. Lin, J. Huang, D. G. Chen, Z. Lin, W. Li, J. K. Huang and F. Huang.(2010).Synthesis and Characterization of Nanocrystalline GaN by Ammonothermal Method Using CsNH2 as Mineralizer.Journal of Nanoscience and Nanotechnology,10(9),5741-5745.
MLA	W. W. Lin, J. Huang, D. G. Chen, Z. Lin, W. Li, J. K. Huang and F. Huang."Synthesis and Characterization of Nanocrystalline GaN by Ammonothermal Method Using CsNH2 as Mineralizer".Journal of Nanoscience and Nanotechnology 10.9(2010):5741-5745.