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Oxygen-doping to Bi2S3 thin film and its substrate-dependent resistive switching
Tian, Ye*; Zhang, Saiwen; Tan, Weishi
刊名MATERIALS RESEARCH EXPRESS
2019
卷号6期号:11
关键词resistive switching oxygen doping interfacial trap
ISSN号2053-1591
DOI10.1088/2053-1591/ab5007
URL标识查看原文
WOS记录号WOS:000495693900002
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/5257269
专题湖南城市学院
作者单位1.[Zhang, Saiwen
2.Tan, Weishi
3.Tian, Ye] Hunan City Univ, Sch Informat & Elect Engn, Yiyang 43000, Peoples R China.
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GB/T 7714
Tian, Ye*,Zhang, Saiwen,Tan, Weishi. Oxygen-doping to Bi2S3 thin film and its substrate-dependent resistive switching[J]. MATERIALS RESEARCH EXPRESS,2019,6(11).
APA Tian, Ye*,Zhang, Saiwen,&Tan, Weishi.(2019).Oxygen-doping to Bi2S3 thin film and its substrate-dependent resistive switching.MATERIALS RESEARCH EXPRESS,6(11).
MLA Tian, Ye*,et al."Oxygen-doping to Bi2S3 thin film and its substrate-dependent resistive switching".MATERIALS RESEARCH EXPRESS 6.11(2019).
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