Oxygen-doping to Bi2S3 thin film and its substrate-dependent resistive switching | |
Tian, Ye*; Zhang, Saiwen; Tan, Weishi | |
刊名 | MATERIALS RESEARCH EXPRESS |
2019 | |
卷号 | 6期号:11 |
关键词 | resistive switching oxygen doping interfacial trap |
ISSN号 | 2053-1591 |
DOI | 10.1088/2053-1591/ab5007 |
URL标识 | 查看原文 |
WOS记录号 | WOS:000495693900002 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5257269 |
专题 | 湖南城市学院 |
作者单位 | 1.[Zhang, Saiwen 2.Tan, Weishi 3.Tian, Ye] Hunan City Univ, Sch Informat & Elect Engn, Yiyang 43000, Peoples R China. |
推荐引用方式 GB/T 7714 | Tian, Ye*,Zhang, Saiwen,Tan, Weishi. Oxygen-doping to Bi2S3 thin film and its substrate-dependent resistive switching[J]. MATERIALS RESEARCH EXPRESS,2019,6(11). |
APA | Tian, Ye*,Zhang, Saiwen,&Tan, Weishi.(2019).Oxygen-doping to Bi2S3 thin film and its substrate-dependent resistive switching.MATERIALS RESEARCH EXPRESS,6(11). |
MLA | Tian, Ye*,et al."Oxygen-doping to Bi2S3 thin film and its substrate-dependent resistive switching".MATERIALS RESEARCH EXPRESS 6.11(2019). |
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