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	Factorial experiment study on deposition parameter dependence of the energy bandgap of a-SiGe:H thin film prepared by plasma enhanced chemical vapor deposition
	Zhao, Lei[1]; Yan, Baojun[2]; Zhao, Bending[3]; Diao, Hongwei[4]; Wang, Wenjing[5]
	2012
会议名称	2011 International Conference on Advanced Materials and Engineering Materials, ICAMEM2011
会议日期	2011-11-22
页码	663-667
收录类别	EI
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/5252710
专题	河南大学
作者单位	[1]Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China [2]Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China [3]Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China |Henan Key Laboratory of Photovoltaic Materials, College of Physics and Electronics, Henan University, Luoyang 475001, China[4]Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China [5]Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China
推荐引用方式 GB/T 7714	Zhao, Lei[1],Yan, Baojun[2],Zhao, Bending[3],et al. Factorial experiment study on deposition parameter dependence of the energy bandgap of a-SiGe:H thin film prepared by plasma enhanced chemical vapor deposition[C]. 见:2011 International Conference on Advanced Materials and Engineering Materials, ICAMEM2011. 2011-11-22.

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