p型单晶硅涂源掺锰新方法

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	p型单晶硅涂源掺锰新方法
	崔志明; 巴维真; 陈朝阳; 蔡志军; 丛秀云
刊名	电子元件与材料
	2005
卷号	24 期号:6 页码:21-23
关键词	电子技术扩散源补偿度固相反应锰硅化物
ISSN号	1001-2028
其他题名	study of manganese doped p-type single crystal silicon in the daubing source
中文摘要	研究了扩散源的浓度与掺杂后硅材料补偿度之间的关系。以MnCl2·4H2O乙醇溶液为扩散源,涂在初始电阻率为3.8?·cm的p型单晶硅片表面,在高温(1200℃)下掺杂锰后,在室温避光条件下,用SDY—5型双电测四探针仪测样品电阻率ρ。改变扩散源的浓度重复实验,用XRD对扩散后的样品进行分析,结果表明:当硅片表面浓度为23.4×10 8mol/cm2时,扩散后样品体电阻率的径向不均匀度在5%以内,扩散后硅片的补偿度最大。
英文摘要	MnCl2 ? 4H2O ethanol solution was daubed to a surface of p-type single crystal Si disc of 3.8 Q. ? cm as a Mn dopant source, and the sample was heated at 1 200 °C to do Mn diffusion. Experiments were repeated by changing concentration of the solution and obtaining different surface density of daubed source. Resistivities of the doped samples were measured with SDY-5 four-probe device at room temperature and photophobic condition. The samples were also analyzed using X-ray diferaction method. Experimental results show that resistivity and compensation degree of the doped samples both obtain maximum values when surface density of the daubed source is 23.4xlO"8 mol/cm2, while radial uniformity of resistivity of the sample is within 5%.
学科主题	Engineering (provided by Thomson Reuters)
公开日期	2012-11-29
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/2138]
专题	新疆理化技术研究所_材料物理与化学研究室
作者单位	中国科学院新疆理化技术研究所；中国科学院研究生院
推荐引用方式 GB/T 7714	崔志明,巴维真,陈朝阳,等. p型单晶硅涂源掺锰新方法[J]. 电子元件与材料,2005,24(6):21-23.
APA	崔志明,巴维真,陈朝阳,蔡志军,&丛秀云.(2005).p型单晶硅涂源掺锰新方法.电子元件与材料,24(6),21-23.
MLA	崔志明,et al."p型单晶硅涂源掺锰新方法".电子元件与材料 24.6(2005):21-23.