The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET

CORC > 新疆理化技术研究所 > 中国科学院新疆理化技术研究所 > 新疆维吾尔自治区电子信息材料与器件重点实验室

	The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET
	Cui Jiang-Wei; Yu Xue-Feng; Ren Di-Yuan; Lu Jian
刊名	ACTA PHYSICA SINICA
	2012
卷号	61 期号:2 页码:-
关键词	sub-micro total dose irradiation hot-carrier effect
ISSN号	1000-3290
通讯作者	Cui, JW
中文摘要	Total dose irradiation and the hot-carrier damages are two of the important factors for the application of sub-micro and even smaller MOS devices. Therefore, how to prevent the device from being damaged attracts much attention. Total dose irradiation and hot-carrier effects of sub-micro NMOSFET with various channel sizes are studied. Electronic parameters are measured and the results show that though the principles of damages are somewhat similar, the total dose irradiation and the damage behavior and their dependences on the width-to-length(W/L) ratio of channel size for these two effects are different. The most notable damage of radiation lies in the great increase of the off-state leakage current, and the damage increases with W/L reducing. While for hot-carrier effect, several parameters such as trans-conductance change a lot, except for the off-state leakage current. And the damage increases as channel length and channel width decrease. The different damage behaviors and different relations to channel size are attributed to the different location of charges induced. Therefore, different aspects should be considered when the device is hardened against these two effects.
学科主题	Physics
收录类别	SCI
公开日期	2012-11-29
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/1649]
专题	新疆理化技术研究所_新疆维吾尔自治区电子信息材料与器件重点实验室
作者单位	Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Cui Jiang-Wei,Yu Xue-Feng,Ren Di-Yuan,et al. The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET[J]. ACTA PHYSICA SINICA,2012,61(2):-.
APA	Cui Jiang-Wei,Yu Xue-Feng,Ren Di-Yuan,&Lu Jian.(2012).The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET.ACTA PHYSICA SINICA,61(2),-.
MLA	Cui Jiang-Wei,et al."The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET".ACTA PHYSICA SINICA 61.2(2012):-.