Structural, mechanical and tribological characterizations of a-C:H:Si films prepared by a hybrid PECVD and sputtering technique,
Zhou HD(周惠娣); Li HX(李红轩); Ji L(吉利); Chen JM(陈建敏); Chen JM(陈建敏)
刊名Journal of Physics D: Applied Physics
2009
卷号42页码:165407(1-13)
ISSN号0022-3727
通讯作者陈建敏
中文摘要a-C:H:Si films were prepared under different CH4/Ar ratios by a hybrid radio frequency plasma-enhanced chemical vapour deposition (RFPECVD) and unbalanced magnetron sputtering technique. Characterizations showed that the CH4/Ar ratio affected not only the content but also the chemical state of the doped Si, thus further affecting the microstructures,mechanical and tribological performances of the a-C:H:Si films. Generally, when the CH4/Ar ratio was low ( 4/2), the Si-doping content dropped with increased CH4 percentage,accompanied by a decreased sp3 (C–Si+C–C)/sp2(C=C), increased ID/IG ratio and up-shift of the G peak position, as can be seen from the Raman spectra, while at a higher CH4 percentage(e.g. CH4/Ar = 5/2), the prepared a-C:H:Si films exhibited a series of aberrant properties due to the incorporation of abundant H and the high oxidization of the doped Si. Anotherunique characteristic of our films was the presence of numerous Si–Si bonds at high Sicontent, which was not observed in the a-C:H:Si films produced by the decomposition of Si-containing gaseous precursors. Moreover, although Si incorporation improved suchproperties of the DLC films as adhesion strength, internal stress and tribological moisturesensitivity, its effectiveness in enhancing the mechanical and tribological performances were governed not by the Si-doping content or sp3-C fraction but by the film continuity or adhesion (minimized interlinking destruction by the Si–H, C–H, Si–O–Si bonds) and sp2 (C=C) fraction (based on the film continuity).
学科主题材料科学与物理化学
收录类别SCI
资助信息the National Natural Science Foundation of China (Grant Nos 50705093;50575217);the Innovative Group Foundation from NSFC (Grant No 50421502);the National 973 Project (No 2007CB607601)
语种英语
公开日期2012-11-13
内容类型期刊论文
源URL[http://210.77.64.217/handle/362003/2083]  
专题兰州化学物理研究所_固体润滑国家重点实验室
兰州化学物理研究所_先进润滑与防护材料研究发展中心
通讯作者Chen JM(陈建敏); Chen JM(陈建敏)
推荐引用方式
GB/T 7714
Zhou HD,Li HX,Ji L,et al. Structural, mechanical and tribological characterizations of a-C:H:Si films prepared by a hybrid PECVD and sputtering technique,[J]. Journal of Physics D: Applied Physics,2009,42:165407(1-13).
APA 周惠娣,李红轩,吉利,陈建敏,&陈建敏.(2009).Structural, mechanical and tribological characterizations of a-C:H:Si films prepared by a hybrid PECVD and sputtering technique,.Journal of Physics D: Applied Physics,42,165407(1-13).
MLA 周惠娣,et al."Structural, mechanical and tribological characterizations of a-C:H:Si films prepared by a hybrid PECVD and sputtering technique,".Journal of Physics D: Applied Physics 42(2009):165407(1-13).
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