20.8W TM polarized GaAsP laser diodes of 808nm wavelength | |
Li, Peixu; Jiang, Kai; Zhang, Xin; Tang, Qingmin; Xia, Wei; Li, Shuqiang; Ren, Zhongxiang; Xu, Xiangang | |
刊名 | Proceedings of SPIE - The International Society for Optical Engineering |
2013 | |
卷号 | 8605 |
关键词 | GaAsP Laser Diode LP- MOCVD TM Polarization |
DOI | 10.1117/12.2002983 |
会议名称 | High-Power Diode Laser Technology and Applications XI |
URL标识 | 查看原文 |
会议日期 | 3 February 2013 through 5 February 2013 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5161586 |
专题 | 山东大学 |
作者单位 | Shandong Huaguang Optoelectronics Co., Ltd. |
推荐引用方式 GB/T 7714 | Li, Peixu,Jiang, Kai,Zhang, Xin,et al. 20.8W TM polarized GaAsP laser diodes of 808nm wavelength[J]. Proceedings of SPIE - The International Society for Optical Engineering,2013,8605. |
APA | Li, Peixu.,Jiang, Kai.,Zhang, Xin.,Tang, Qingmin.,Xia, Wei.,...&Xu, Xiangang.(2013).20.8W TM polarized GaAsP laser diodes of 808nm wavelength.Proceedings of SPIE - The International Society for Optical Engineering,8605. |
MLA | Li, Peixu,et al."20.8W TM polarized GaAsP laser diodes of 808nm wavelength".Proceedings of SPIE - The International Society for Optical Engineering 8605(2013). |
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