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	Effect of intrinsic vacancies on the ferromagnetism of V-doped ZnO based on first-principles calculation
	Yu, Wei[1]; Liu, Hongfei[2]; Zhang, Li[3]; Gao, Huixia[4]; Fu, Guangsheng[5]
刊名	PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
	2010
卷号	247期号:9页码:2185-2189
关键词	defect levels diluted magnetic semiconductors first-principles calculation
ISSN号	0370-1972
DOI	http://dx.doi.org/10.1002/pssb.200945529
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5105759
专题	河北大学
作者单位	1.[1]Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China. 2.[2]Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China. 3.[3]Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China. 4.[4]Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China. 5.[5]Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China.
推荐引用方式 GB/T 7714	Yu, Wei[1],Liu, Hongfei[2],Zhang, Li[3],et al. Effect of intrinsic vacancies on the ferromagnetism of V-doped ZnO based on first-principles calculation[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,2010,247(9):2185-2189.
APA	Yu, Wei[1],Liu, Hongfei[2],Zhang, Li[3],Gao, Huixia[4],&Fu, Guangsheng[5].(2010).Effect of intrinsic vacancies on the ferromagnetism of V-doped ZnO based on first-principles calculation.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,247(9),2185-2189.
MLA	Yu, Wei[1],et al."Effect of intrinsic vacancies on the ferromagnetism of V-doped ZnO based on first-principles calculation".PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 247.9(2010):2185-2189.

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