QQ客服 官方微博 反馈留言

	Tristate electrochemical metallization memory based in the hydrogenated nanocrystalline silicon films
	Yan, X. B.[1]; Chen, Y. F.[2]; Hao, H.[3]; Liu, Q.[4]; Zhang, E. P.[5]; Shi, S. S.[6]; Lou, J. Z.[7]
刊名	APPLIED PHYSICS LETTERS
	2014
卷号	105期号:7
ISSN号	0003-6951
DOI	http://dx.doi.org/10.1063/1.4893601
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5079638
专题	河北大学
作者单位	1.[1]Hebei Univ, Coll Electron & Informat Engn, Baoding 071002, Peoples R China. 2.Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China. 3.[2]Hebei Univ, Coll Electron & Informat Engn, Baoding 071002, Peoples R China. 4.[3]Hebei Univ, Coll Electron & Informat Engn, Baoding 071002, Peoples R China. 5.[4]Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China. 6.[5]Hebei Univ, Coll Electron & Informat Engn, Baoding 071002, Peoples R China. 7.[6]Hebei Univ, Coll Electron & Informat Engn, Baoding 071002, Peoples R China. 8.[7]Hebei Univ, Coll Electron & Informat Engn, Baoding 071002, Peoples R China.
推荐引用方式 GB/T 7714	Yan, X. B.[1],Chen, Y. F.[2],Hao, H.[3],et al. Tristate electrochemical metallization memory based in the hydrogenated nanocrystalline silicon films[J]. APPLIED PHYSICS LETTERS,2014,105(7).
APA	Yan, X. B.[1].,Chen, Y. F.[2].,Hao, H.[3].,Liu, Q.[4].,Zhang, E. P.[5].,...&Lou, J. Z.[7].(2014).Tristate electrochemical metallization memory based in the hydrogenated nanocrystalline silicon films.APPLIED PHYSICS LETTERS,105(7).
MLA	Yan, X. B.[1],et al."Tristate electrochemical metallization memory based in the hydrogenated nanocrystalline silicon films".APPLIED PHYSICS LETTERS 105.7(2014).

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。