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	Highly Transparent Bipolar Resistive Switching Memory in Zr0.5Hf0.5O2 Films With Amorphous Semiconducting In-Ga-Zn-O as Electrode
	Yan, Xiaobing[1]; Zhang, Erpeng[2]; Hao, Hua[3]; Chen, Yingfang[4]; Bai, Gang[5]; Liu, Qi[6]; Lou, Jianzhou[7]; Liu, Baoting[8]; Li, Xiaoting[9]
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2015
卷号	62期号:10页码:3244-3249
关键词	Relaxation behavior resistive switching (RS) mechanism transparent resistive random access memory (TRRAM) Zr0.5Hf0.5O2
ISSN号	0018-9383
DOI	http://dx.doi.org/10.1109/TED.2015.2461662
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5072899
专题	河北大学
作者单位	1.[1]Hebei Univ, Coll Elect & Informat Engn, Key Lab Digital Med Engn Hebei Prov, Baoding 071002, Peoples R China.,Hebei Univ, Coll Elect & Informat Engn, Key Lab Optoelect Informat Mat Hebei Prov, Baoding 071002, Peoples R China. 2.Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China. 3.[2]Hebei Univ, Coll Elect & Informat Engn, Key Lab Digital Med Engn Hebei Prov, Baoding 071002, Peoples R China.,Hebei Univ, Coll Elect & Informat Engn, Key Lab Optoelect Informat Mat Hebei Prov, Baoding 071002, Peoples R China. 4.[3]Hebei Univ, Coll Elect & Informat Engn, Key Lab Digital Med Engn Hebei Prov, Baoding 071002, Peoples R China.,Hebei Univ, Coll Elect & Informat Engn, Key Lab Optoelect Informat Mat Hebei Prov, Baoding 071002, Peoples R China. 5.[4]Hebei Univ, Coll Elect & Informat Engn, Key Lab Digital Med Engn Hebei Prov, Baoding 071002, Peoples R China.,Hebei Univ, Coll Elect & Informat Engn, Key Lab Optoelect Informat Mat Hebei Prov, Baoding 071002, Peoples R China. 6.[5]Nanjing Univ Posts & Telecommun, Coll Elect Sci & Engn, Nanjing 210023, Jiangsu, Peoples R China. 7.[6]Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China. 8.[7]Hebei Univ, Coll Elect & Informat Engn, Key Lab Digital Med Engn Hebei Prov, Baoding 071002, Peoples R China.,Hebei Univ, Coll Elect & Informat Engn, Key Lab Optoelect Informat Mat Hebei Prov, Baoding 071002, Peoples R China. 9.[8]Hebei Univ, Dept Phys, Baoding 071002, Peoples R China. 10.[9]Hebei Univ, Coll Elect & Informat Engn, Key Lab Digital Med Engn Hebei Prov, Baoding 071002, Peoples R China.,Hebei Univ, Coll Elect & Informat Engn, Key Lab Optoelect Informat Mat Hebei Prov, Baoding 071002, Peoples R China.
推荐引用方式 GB/T 7714	Yan, Xiaobing[1],Zhang, Erpeng[2],Hao, Hua[3],et al. Highly Transparent Bipolar Resistive Switching Memory in Zr0.5Hf0.5O2 Films With Amorphous Semiconducting In-Ga-Zn-O as Electrode[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2015,62(10):3244-3249.
APA	Yan, Xiaobing[1].,Zhang, Erpeng[2].,Hao, Hua[3].,Chen, Yingfang[4].,Bai, Gang[5].,...&Li, Xiaoting[9].(2015).Highly Transparent Bipolar Resistive Switching Memory in Zr0.5Hf0.5O2 Films With Amorphous Semiconducting In-Ga-Zn-O as Electrode.IEEE TRANSACTIONS ON ELECTRON DEVICES,62(10),3244-3249.
MLA	Yan, Xiaobing[1],et al."Highly Transparent Bipolar Resistive Switching Memory in Zr0.5Hf0.5O2 Films With Amorphous Semiconducting In-Ga-Zn-O as Electrode".IEEE TRANSACTIONS ON ELECTRON DEVICES 62.10(2015):3244-3249.

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