Study of the ion implantation of Sn-119 in a-Si1-xCx : H

CORC > 上海应用物理研究所 > 中国科学院上海应用物理研究所 > 中科院上海原子核所2003年前

	Study of the ion implantation of Sn-119 in a-Si1-xCx : H
	Barancira, T ; Moons, R ; Koops, GEJ ; Deweerd, W ; Pattyn, H ; Tzenov, N ; Tzolov, M ; Dimova-Malinovska, D ; Tsvetkova, T ; Venegas, R ; Zhang, GL（张桂林）
刊名	JOURNAL OF NON-CRYSTALLINE SOLIDS
	1999
卷号	244 期号:40942 页码:189
ISSN号	0022-3093
英文摘要	The Mossbauer spectroscopy and Rutherford backscattering spectroscopy studies presented here allow an investigation of the origins of the previously observed changes in optical absorption in sputter deposited a-Si1-xCx:H films caused by high dose Sn implantations. To this end, we investigate the microscopic surroundings and the bonding structures of the Sn atoms. At doses up to 1 x 10(17) cm(-2) a major fraction of Sn takes a quasi-substitutional site, sp(3) bonded to four Si neighbours, while a smaller fraction is present as Sn2+, presumably due to SnO formation. The latter fraction increases at the higher doses and the increase is paralleled by the formation of Sn4+ and a prominent metallic sn component. This beta-Sn fraction, presumably in the form of nanosized precipitates, becomes dominant at the higher doses, thus explaining the complete lack of optical transmission. (C) 1999 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
WOS记录号	WOS:000079509900010
公开日期	2012-09-25
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/10189]
专题	上海应用物理研究所_中科院上海原子核所2003年前
推荐引用方式 GB/T 7714	Barancira, T,Moons, R,Koops, GEJ,et al. Study of the ion implantation of Sn-119 in a-Si1-xCx : H[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS,1999,244(40942):189.
APA	Barancira, T.,Moons, R.,Koops, GEJ.,Deweerd, W.,Pattyn, H.,...&Zhang, GL.(1999).Study of the ion implantation of Sn-119 in a-Si1-xCx : H.JOURNAL OF NON-CRYSTALLINE SOLIDS,244(40942),189.
MLA	Barancira, T,et al."Study of the ion implantation of Sn-119 in a-Si1-xCx : H".JOURNAL OF NON-CRYSTALLINE SOLIDS 244.40942(1999):189.