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	Electronic excitation induced solid-state amorphization in Ge-Sb-Te alloy
	Li X.-B.; Liu X.Q.; Liu X.; Han D.; Zhang Z.; Han X.D.; Zhang S.B.
	2011
会议名称	2011 MRS Spring Meeting
会议地点	San Francisco, CA
页码	77-82
会议录	2011 MRS Spring Meeting
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/4855577
专题	大连理工大学
作者单位	1.State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China 2.Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing100022, China 3.Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, United States, School of Chemistry, Dalian University of Technology, Dalian 116024, China 4.State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China, Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, United States
推荐引用方式 GB/T 7714	Li X.-B.,Liu X.Q.,Liu X.,et al. Electronic excitation induced solid-state amorphization in Ge-Sb-Te alloy[C]. 见:2011 MRS Spring Meeting. San Francisco, CA.

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