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	Forward block characteristic of a novel anti-ESD RF SOI LIGBT with a buried P-type layer
	Zhang H.P.; Qi R.S.; Zhao W.L.; Zhang H.F.; Liu G.H.; Wang D.J.; Niu X.Y.; Lin M.; Xu L.Y.
	2011
会议名称	2011 China-Japan Joint Microwave Conference, CJMW 2011
会议日期	2011-04-20
会议地点	Hangzhou
页码	454-457
会议录	2011 China-Japan Joint Microwave Conference, CJMW 2011
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/4853620
专题	大连理工大学
作者单位	1.Key Laboratory of RF Circuit and System, Ministry of Education, Hangzhou Dianzi University, Hangzhou, 310018, China, School of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024, China, Hangzhou Hanan Semiconductor Co. Ltd., Hangzhou, 310018, China 2.Key Laboratory of RF Circuit and System, Ministry of Education, Hangzhou Dianzi University, Hangzhou, 310018, China 3.School of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024, China
推荐引用方式 GB/T 7714	Zhang H.P.,Qi R.S.,Zhao W.L.,et al. Forward block characteristic of a novel anti-ESD RF SOI LIGBT with a buried P-type layer[C]. 见:2011 China-Japan Joint Microwave Conference, CJMW 2011. Hangzhou. 2011-04-20.

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