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	Robust Two-Dimensional Topological Insulators in Methyl-Functionalized Bismuth, Antimony, and Lead Bilayer Films
	Ma, Yandong; Dai, Ying; Kou, Liangzhi; Frauenheim, Thomas; Heine, Thomas
刊名	Nano letters
	2015
卷号	15期号:2页码:1083-1089
关键词	Topological insulators Dirac states Quantum spin Hall effect Two-dimensional material Large band gap Strain engineering
DOI	10.1021/nl504037u
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4790732
专题	山东大学
作者单位	Engineering and Science, Jacobs University Bremen, Campus Ring 1, Bremen, 28759, Germany, School of Physics, State Key Laboratory of Crystal M
推荐引用方式 GB/T 7714	Ma, Yandong,Dai, Ying,Kou, Liangzhi,et al. Robust Two-Dimensional Topological Insulators in Methyl-Functionalized Bismuth, Antimony, and Lead Bilayer Films[J]. Nano letters,2015,15(2):1083-1089.
APA	Ma, Yandong,Dai, Ying,Kou, Liangzhi,Frauenheim, Thomas,&Heine, Thomas.(2015).Robust Two-Dimensional Topological Insulators in Methyl-Functionalized Bismuth, Antimony, and Lead Bilayer Films.Nano letters,15(2),1083-1089.
MLA	Ma, Yandong,et al."Robust Two-Dimensional Topological Insulators in Methyl-Functionalized Bismuth, Antimony, and Lead Bilayer Films".Nano letters 15.2(2015):1083-1089.

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