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	Explicit continuous I-V model for 2D transition metal dichalcogenide field-effect transistors
	Deng, LF; Si, CM; Huang, HQ; Wang, J; Wen, H; Im, S
刊名	MICROELECTRONICS JOURNAL
	2019
卷号	Vol.88页码:61-66
关键词	Explicit model I-V model 2D field-effect transistor Transition metal dichalcogenide (TMD) Molybdenum disulphide (MoS2) Molybdenum diselenide (MoSe2)
ISSN号	0026-2692;1879-2391
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4748874
专题	湖南大学
作者单位	1.Hunan Univ, Coll Elect & Informat Engn, Changsha 410082, Hunan, Peoples R China 2.Yonsei Univ, Dept Phys, Seoul 120749, South Korea 3.Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
推荐引用方式 GB/T 7714	Deng, LF,Si, CM,Huang, HQ,et al. Explicit continuous I-V model for 2D transition metal dichalcogenide field-effect transistors[J]. MICROELECTRONICS JOURNAL,2019,Vol.88:61-66.
APA	Deng, LF,Si, CM,Huang, HQ,Wang, J,Wen, H,&Im, S.(2019).Explicit continuous I-V model for 2D transition metal dichalcogenide field-effect transistors.MICROELECTRONICS JOURNAL,Vol.88,61-66.
MLA	Deng, LF,et al."Explicit continuous I-V model for 2D transition metal dichalcogenide field-effect transistors".MICROELECTRONICS JOURNAL Vol.88(2019):61-66.

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