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	Bismuth-induced band-tail states in GaAsBi probed by photoluminescence
	Bing Yan; Xiren Chen; Liangqing Zhu; Wenwu Pan; Lijuan Wang; Li Yue; Xiaolei Zhang; Li Han; Feng Liu; Shumin Wang
刊名	Applied Physics Letters
	2019
卷号	Vol.114 No.5页码:052104
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4744312
专题	湖南大学
作者单位	1.Department of Physics, Shanghai Normal University, 200234 Shanghai, China 2.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, China 3.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China 4.Key Laboratory of polar Materials and Devices, East China Normal University, 200062 Shanghai, China 5.Key Laboratory of Terahertz Solid State Technology, CAS, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China 6.Photonic Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-412 96 Gteborg, Sweden a) Electronic mail: fliu@shnu.edu.cn b) Electronic mail: jshao@mail.sitp.ac.cn
推荐引用方式 GB/T 7714	Bing Yan,Xiren Chen,Liangqing Zhu,et al. Bismuth-induced band-tail states in GaAsBi probed by photoluminescence[J]. Applied Physics Letters,2019,Vol.114 No.5:052104.
APA	Bing Yan.,Xiren Chen.,Liangqing Zhu.,Wenwu Pan.,Lijuan Wang.,...&Jun Shao.(2019).Bismuth-induced band-tail states in GaAsBi probed by photoluminescence.Applied Physics Letters,Vol.114 No.5,052104.
MLA	Bing Yan,et al."Bismuth-induced band-tail states in GaAsBi probed by photoluminescence".Applied Physics Letters Vol.114 No.5(2019):052104.

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