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	Molecular beam epitaxy growth of AlAsBi
	Chang Wang; Lijuan Wang; Xiaoyan Wu; Yanchao Zhang; Hao Liang; Li Yue; Zhenpu Zhang; Xin Ou and Shumin Wang
刊名	Semiconductor Science and Technology
	2019
卷号	Vol.34 No.3页码:034003
ISSN号	0268-1242;1361-6641
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4741607
专题	湖南大学
作者单位	1.Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China 2.School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People’s Republic of China 3.University of Chinese Academy of Sciences, Beijing 100190, People’s Republic of China 4.State Key Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Key Laboratory on Navigation and Location-Based Service and Center of Quantum Information Sensing and Processing, Shanghai Jiao Tong University, Shanghai 200240, People’s Republic of China 5.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China 6.Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg SE-41296, Sweden
推荐引用方式 GB/T 7714	Chang Wang,Lijuan Wang,Xiaoyan Wu,et al. Molecular beam epitaxy growth of AlAsBi[J]. Semiconductor Science and Technology,2019,Vol.34 No.3:034003.
APA	Chang Wang.,Lijuan Wang.,Xiaoyan Wu.,Yanchao Zhang.,Hao Liang.,...&Xin Ou and Shumin Wang.(2019).Molecular beam epitaxy growth of AlAsBi.Semiconductor Science and Technology,Vol.34 No.3,034003.
MLA	Chang Wang,et al."Molecular beam epitaxy growth of AlAsBi".Semiconductor Science and Technology Vol.34 No.3(2019):034003.

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