Molecular dynamics simulation of subsurface damage mechanism during nanoscratching of single crystal silicon | |
Dai, HF; Li, SB; Chen, GY | |
刊名 | PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART J-JOURNAL OF ENGINEERING TRIBOLOGY |
2019 | |
卷号 | Vol.233 No.1页码:61-73 |
关键词 | Molecular dynamics phase transformation dislocation subsurface damage scratch |
ISSN号 | 1350-6501 |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4738222 |
专题 | 湖南大学 |
作者单位 | 1.Guizhou Univ, Coll Mech Engn, Guiyang 550025, Guizhou, Peoples R China 2.Hunan Univ, State Key Lab Adv Design & Mfg Vehicle Body, Changsha, Hunan, Peoples R China |
推荐引用方式 GB/T 7714 | Dai, HF,Li, SB,Chen, GY. Molecular dynamics simulation of subsurface damage mechanism during nanoscratching of single crystal silicon[J]. PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART J-JOURNAL OF ENGINEERING TRIBOLOGY,2019,Vol.233 No.1:61-73. |
APA | Dai, HF,Li, SB,&Chen, GY.(2019).Molecular dynamics simulation of subsurface damage mechanism during nanoscratching of single crystal silicon.PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART J-JOURNAL OF ENGINEERING TRIBOLOGY,Vol.233 No.1,61-73. |
MLA | Dai, HF,et al."Molecular dynamics simulation of subsurface damage mechanism during nanoscratching of single crystal silicon".PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART J-JOURNAL OF ENGINEERING TRIBOLOGY Vol.233 No.1(2019):61-73. |
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