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	Optical properties improvement of InGaAs/GaInP single quantum well grown by metal-organic chemical vapor deposition.
	Yuan, Huibo; Li, Lin; Zhang, Jing; Li, Zaijin; Zeng, Lina; Wang, Yong; Qu, Yi; Ma, Xiaohui; Liu, Guojun
刊名	Optik - International Journal for Light & Electron Optics
	2019
卷号	Vol.176页码:295-301
关键词	QUANTUM wells *ENERGY-band theory of solids *TWO-dimensional materials (Nanotechnology) *QUANTUM dots *CAVITY polaritons
ISSN号	0030-4026
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4737544
专题	湖南大学
作者单位	1.National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and technology, No. 7186, Weixing Road, Chaoyang District, Changchun, Jilin 130022, China 2.College of Physics and Eletronic Engineering, Hainan Normal University, No. 99, Longkunnan Road, Qiongshan District, Haikou, Hainan 571158, China
推荐引用方式 GB/T 7714	Yuan, Huibo,Li, Lin,Zhang, Jing,et al. Optical properties improvement of InGaAs/GaInP single quantum well grown by metal-organic chemical vapor deposition.[J]. Optik - International Journal for Light & Electron Optics,2019,Vol.176:295-301.
APA	Yuan, Huibo.,Li, Lin.,Zhang, Jing.,Li, Zaijin.,Zeng, Lina.,...&Liu, Guojun.(2019).Optical properties improvement of InGaAs/GaInP single quantum well grown by metal-organic chemical vapor deposition..Optik - International Journal for Light & Electron Optics,Vol.176,295-301.
MLA	Yuan, Huibo,et al."Optical properties improvement of InGaAs/GaInP single quantum well grown by metal-organic chemical vapor deposition.".Optik - International Journal for Light & Electron Optics Vol.176(2019):295-301.

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