QQ客服 官方微博 反馈留言

	Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation
	Zhang, Yanwen; Xue, Haizhou; Zarkadoula, Eva; Sachan, Ritesh; Ostrouchov, Christopher; Liu, Peng; Wang, Xue-lin; Zhang, Shuo; Wang, Ti 更多
刊名	CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE
	2017
卷号	21期号:6页码:285-298
关键词	Defects Ion irradiation Annealing Silicon carbide Dynamic recovery Ionization
DOI	10.1016/j.cossms.2017.09.003
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4684430
专题	山东大学
作者单位	1.Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA. 2.[Xue, Haizh
推荐引用方式 GB/T 7714	Zhang, Yanwen,Xue, Haizhou,Zarkadoula, Eva,et al. Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation[J]. CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE,2017,21(6):285-298.
APA	Zhang, Yanwen.,Xue, Haizhou.,Zarkadoula, Eva.,Sachan, Ritesh.,Ostrouchov, Christopher.,...&Wang, Ti 更多.(2017).Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation.CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE,21(6),285-298.
MLA	Zhang, Yanwen,et al."Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation".CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE 21.6(2017):285-298.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。