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Terahertz transmission properties of VO2 thin films deposited on c- and m-plane sapphire substrates by pulsed laser deposition
Kou X.Q.; Bian J.M.; Zhang Z.K.
2013
会议名称2013 International Conference on Advanced Technologies and Solutions in Industry, ICATSI 2013
会议日期2013-03-22
会议地点Taiyuan, Shanxi
页码25-28
会议录2013 International Conference on Advanced Technologies and Solutions in Industry, ICATSI 2013
URL标识查看原文
内容类型会议论文
URI标识http://www.corc.org.cn/handle/1471x/4638812
专题大连理工大学
作者单位1.School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, Liaoning, 116024, China
2.School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, Liaoning, 116024, China, Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai, 200050, China
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Kou X.Q.,Bian J.M.,Zhang Z.K.. Terahertz transmission properties of VO2 thin films deposited on c- and m-plane sapphire substrates by pulsed laser deposition[C]. 见:2013 International Conference on Advanced Technologies and Solutions in Industry, ICATSI 2013. Taiyuan, Shanxi. 2013-03-22.
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