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	Exploring and suppressing the kink effect of black phosphorus field-effect transistors operating in the saturation regime
	Xia, Y; Li, GL; Jiang, B; Yang, ZY; Liu, XQ; Xiao, XH; Flandre, D; Wang, CL; Liu, Y; Liao, L
刊名	NANOSCALE
	2019
卷号	Vol.11 No.21页码:10420-10428
ISSN号	2040-3364
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4614716
专题	湖南大学
作者单位	1.Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China 2.Hunan Univ, Sch Phys & Elect, State Key Lab Chemo Biosensing & Chemometr, Changsha 410082, Hunan, Peoples R China 3.Catholic Univ Louvain, Inst Informat & Commun Technol, Elect & Appl Math, B-1348 Louvain La Neuve, Belgium 4.Xian Polytech Univ, Sch Sci, Xian 710048, Shaanxi, Peoples R China
推荐引用方式 GB/T 7714	Xia, Y,Li, GL,Jiang, B,et al. Exploring and suppressing the kink effect of black phosphorus field-effect transistors operating in the saturation regime[J]. NANOSCALE,2019,Vol.11 No.21:10420-10428.
APA	Xia, Y.,Li, GL.,Jiang, B.,Yang, ZY.,Liu, XQ.,...&Liao, L.(2019).Exploring and suppressing the kink effect of black phosphorus field-effect transistors operating in the saturation regime.NANOSCALE,Vol.11 No.21,10420-10428.
MLA	Xia, Y,et al."Exploring and suppressing the kink effect of black phosphorus field-effect transistors operating in the saturation regime".NANOSCALE Vol.11 No.21(2019):10420-10428.

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