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	Electronic structure and exciton shifts in Sb-doped MoS monolayer
	Mianzeng Zhong; Chao Shen; Le Huang; Hui-Xiong Deng; Guozhen Shen; Houzhi Zheng; Zhongming Wei; Jingbo Li
刊名	npj 2D Materials and Applications
	2019
卷号	Vol.3
ISSN号	2397-7132
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4606277
专题	湖南大学
作者单位	1.000 0004 1797 8419, grid.41072 2.6, State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China 3.0000 0001 0379 7164, grid.21641 4.7, Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, China 5.0000 0004 1797 8419, grid.41072 6.0000 0001 0040 0205, grid.41185 7.8, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, China
推荐引用方式 GB/T 7714	Mianzeng Zhong,Chao Shen,Le Huang,et al. Electronic structure and exciton shifts in Sb-doped MoS monolayer[J]. npj 2D Materials and Applications,2019,Vol.3.
APA	Mianzeng Zhong.,Chao Shen.,Le Huang.,Hui-Xiong Deng.,Guozhen Shen.,...&Jingbo Li.(2019).Electronic structure and exciton shifts in Sb-doped MoS monolayer.npj 2D Materials and Applications,Vol.3.
MLA	Mianzeng Zhong,et al."Electronic structure and exciton shifts in Sb-doped MoS monolayer".npj 2D Materials and Applications Vol.3(2019).

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