| Electronic structure and thermoelectric properties of BiOSe with GGA and TB-mBJ potentials | |
| Yusheng Wang; Bin Xu; Gongqi Yu; Jing Zhang; Shanshan Ma; Shaoheng Yuan; Tao Sun and Yuanxu Wang | |
| 刊名 | Japanese Journal of Applied Physics
 |
| 2019 | |
| 卷号 | Vol.58 No.1页码:015501 |
| ISSN号 | 0021-4922;1347-4065 |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4604188 |
| 专题 | 湖南大学 |
| 作者单位 | 1.Department of Mathematics and Information Sciences, North China University of Water Resources and Electric Power, Zhengzhou 450011, People’s Republic of China 2.The Second Artillery Command College, Wuhan 430012, People’s Republic of China 3.Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, People’s Republic of China |
| 推荐引用方式 GB/T 7714 | Yusheng Wang,Bin Xu,Gongqi Yu,et al. Electronic structure and thermoelectric properties of BiOSe with GGA and TB-mBJ potentials[J]. Japanese Journal of Applied Physics,2019,Vol.58 No.1:015501. |
| APA | Yusheng Wang.,Bin Xu.,Gongqi Yu.,Jing Zhang.,Shanshan Ma.,...&Tao Sun and Yuanxu Wang.(2019).Electronic structure and thermoelectric properties of BiOSe with GGA and TB-mBJ potentials.Japanese Journal of Applied Physics,Vol.58 No.1,015501. |
| MLA | Yusheng Wang,et al."Electronic structure and thermoelectric properties of BiOSe with GGA and TB-mBJ potentials".Japanese Journal of Applied Physics Vol.58 No.1(2019):015501. |
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