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-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition">Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, -Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition
Yang, Zai-xing; Liu, Lizhe; Yip, SenPo; Li, Dapan; Shen, Lifan; Zhou, Ziyao; Han, Ning; Hung, Tak Fu; Pun, Edwin Yue-Bun; Wu, Xinglo 更多
刊名ACS NANO
2017
卷号11期号:4页码:4237-4246
关键词GaSb nanowires growth orientation high mobility vapor-solid-solid interface plane orientation in-plane lattice mismatch
DOI10.1021/acsnano.7b01217
URL标识查看原文
公开日期[db:dc_date_available]
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/4596557
专题山东大学
作者单位1.Shandong Univ, Ctr Nanoelect, Jinan 250100, Peoples R China.
2.Shandong Univ, Sch Microel
推荐引用方式
GB/T 7714
Yang, Zai-xing,Liu, Lizhe,Yip, SenPo,et al. -Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition">Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, -Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition[J]. ACS NANO,2017,11(4):4237-4246.
APA Yang, Zai-xing.,Liu, Lizhe.,Yip, SenPo.,Li, Dapan.,Shen, Lifan.,...&Wu, Xinglo 更多.(2017).-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition">Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, -Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition.ACS NANO,11(4),4237-4246.
MLA Yang, Zai-xing,et al."-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition">Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, -Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition".ACS NANO 11.4(2017):4237-4246.
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