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	A scratching force model of diamond abrasive particles in wire sawing of single crystal SiC
	Wang, Peizhi; Ge, Peiqi; Li, Zongqiang; Ge, Mengran; Gao, Yufei
刊名	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
	2017
卷号	68页码:21-29
关键词	Nano scratching Single crystal SiC Wire sawing Indentation size effect
DOI	10.1016/j.mssp.2017.05.032
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4593537
专题	山东大学
作者单位	1.Shandong Univ, Sch Mech Engn, Jinan 250061, Shandong, Peoples R China. 2.[Ge, Peiqi
推荐引用方式 GB/T 7714	Wang, Peizhi,Ge, Peiqi,Li, Zongqiang,et al. A scratching force model of diamond abrasive particles in wire sawing of single crystal SiC[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2017,68:21-29.
APA	Wang, Peizhi,Ge, Peiqi,Li, Zongqiang,Ge, Mengran,&Gao, Yufei.(2017).A scratching force model of diamond abrasive particles in wire sawing of single crystal SiC.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,68,21-29.
MLA	Wang, Peizhi,et al."A scratching force model of diamond abrasive particles in wire sawing of single crystal SiC".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 68(2017):21-29.

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