| Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs | |
| Li JF(李建飞); Lv YJ(吕元杰); Li ZF(李长富); Ji ZW(冀子武); Pang ZY(庞智勇); Xu XG(徐现刚); Xu MS(徐明升) | |
| 刊名 | Chinese Physics B
 |
| 2017 | |
| 期号 | 09页码:519-523 |
| 关键词 | AlGaN/GaN HEMT Fe-doping photoluminescence leakage current |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4593105 |
| 专题 | 山东大学 |
| 作者单位 | 1.School of Microelectronics,Shandong University 2.Nat |
| 推荐引用方式 GB/T 7714 | Li JF,Lv YJ,Li ZF,et al. Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs[J]. Chinese Physics B,2017(09):519-523. |
| APA | Li JF.,Lv YJ.,Li ZF.,Ji ZW.,Pang ZY.,...&Xu MS.(2017).Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs.Chinese Physics B(09),519-523. |
| MLA | Li JF,et al."Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs".Chinese Physics B .09(2017):519-523. |
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