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	High mobility and large domain decoupled epitaxial graphene on SiC (0001¯) surface obtained by nearly balanced hydrogen etching
	Zhang, Fusheng; Chen, Xiufang; Yu, Cancan; Xu, Xiangang; Hu, Xiaobo; Qin, Xiao; Li, Qi; Zhao, Xian; Yu, Peng; Wang, Ruiqi
刊名	Materials Letters
	2017
卷号	195页码:82-85
DOI	10.1016/j.matlet.2017.02.105
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4591308
专题	山东大学
作者单位	State Key Laboratory of Crystal Materials, Shand
推荐引用方式 GB/T 7714	Zhang, Fusheng,Chen, Xiufang,Yu, Cancan,et al. High mobility and large domain decoupled epitaxial graphene on SiC (0001¯) surface obtained by nearly balanced hydrogen etching[J]. Materials Letters,2017,195:82-85.
APA	Zhang, Fusheng.,Chen, Xiufang.,Yu, Cancan.,Xu, Xiangang.,Hu, Xiaobo.,...&Wang, Ruiqi.(2017).High mobility and large domain decoupled epitaxial graphene on SiC (0001¯) surface obtained by nearly balanced hydrogen etching.Materials Letters,195,82-85.
MLA	Zhang, Fusheng,et al."High mobility and large domain decoupled epitaxial graphene on SiC (0001¯) surface obtained by nearly balanced hydrogen etching".Materials Letters 195(2017):82-85.

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