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	Enhanced localisation effect and reduced quantum-confined Stark effect of carriers in InGaN/GaN multiple quantum wells embedded in nanopillars
	Xu, Xinglian; Wang, Qiang; Li, Changfu; Ji, Ziwu; Xu, Mingsheng; Yang, Haifang; Xu, Xiangang
刊名	JOURNAL OF LUMINESCENCE
	2018
卷号	203页码:216-221
关键词	Localisation effect Nanopillars LED Phase-separation Strain relaxation
DOI	10.1016/j.jlumin.2018.06.024
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4582317
专题	山东大学
作者单位	1.Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China. 2.[Wang, Qi
推荐引用方式 GB/T 7714	Xu, Xinglian,Wang, Qiang,Li, Changfu,et al. Enhanced localisation effect and reduced quantum-confined Stark effect of carriers in InGaN/GaN multiple quantum wells embedded in nanopillars[J]. JOURNAL OF LUMINESCENCE,2018,203:216-221.
APA	Xu, Xinglian.,Wang, Qiang.,Li, Changfu.,Ji, Ziwu.,Xu, Mingsheng.,...&Xu, Xiangang.(2018).Enhanced localisation effect and reduced quantum-confined Stark effect of carriers in InGaN/GaN multiple quantum wells embedded in nanopillars.JOURNAL OF LUMINESCENCE,203,216-221.
MLA	Xu, Xinglian,et al."Enhanced localisation effect and reduced quantum-confined Stark effect of carriers in InGaN/GaN multiple quantum wells embedded in nanopillars".JOURNAL OF LUMINESCENCE 203(2018):216-221.

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